Monosilane or disilane derivatives and method for low temperature deposition of silicon-containing films using the same
AssigneeAdvanced Technology Materials, Inc.
InventorsZiyun Wang, Chongying Xu, Thomas H. Baum
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Abstract
This invention relates to silicon precursor compositions for forming silicon-containing films by low temperature (e.g., <550° C.) chemical vapor deposition processes for fabrication of ULSI devices and device structures. Such silicon precursor compositions comprise at least a silane or disilane derivative that is substituted with at least one alkylhydrazine functional groups and is free of halogen substitutes.
Claims20
A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions with a vapor of a compound selected from the group consisting of:
- (i) compounds of the formula:
- wherein R1 and R2 may be the same as or different from each another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form C3-C6 heterocyclic functional group with N, and wherein X, Y, and Z may be the same as or different from one another and are independently selected from the group consisting of C1-C7 alkyl, alkylamino, and dialkylamino;
- and
- (ii) compounds of the formula:
- wherein R1, R2, R3, and R4 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form a C3-C6 heterocyclic functional group with N, or R3 and R4 together may form a C3-C6 heterocyclic functional group with N, and wherein X1, X2, Y1, and Y2 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are as described above, and wherein R1, R2, R3, R4, X1, X2, Y1, and Y2 are not all methyl.
A method of forming a silicon-containing film on a substrate, comprising contacting a substrate under vapor deposition conditions comprising a temperature below 450° C. with a vapor of a compound selected from the group consisting of:
- (i) compounds of the formula:
- wherein R1 and R2 may be the same as or different from each another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form C3-C6 heterocyclic functional group with N, and wherein X, Y, and Z are all the same as one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are same as above and wherein R1R2, X, Y and Z are not all H;
- and
- (ii) compounds of the formula:
- wherein R1, R2, R3, and R4 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, aryl, and C3-C6 cycloalkyl, or R1 and R2 together may form a C3-C6 heterocyclic functional group with N, or R3 and R4 together may form a C3-C6 heterocyclic functional group with N, and wherein X1, X2, Y1, and Y2 may be the same as or different from one another and are independently selected from the group consisting of H, C1-C7 alkyl, alkylamino, dialkylamino, and R1R2NNH—, wherein R1 and R2 are as described above, and wherein R1, R2, R3, R4, X1, X2, Y1, and Y2 are not all methyl.
Dependencies are inferred from the claim text.