Deposition method for passivation of silicon wafers
AssigneeABB Technology AG
InventorsKranthi Akurati, Magnus Kunow, Andreas Zimmermann, Ron Jervis
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Abstract
A substrate is mounted onto an elevated substrate support of a substrate carrier plate. The substrate carrier plate with the substrate is then placed in a plasma reactor. Due to the elevated substrate support, both opposite sides of the substrate are exposed to the plasma and are therefore coated with an electrical passivation layer.
Claims19
A substrate carrier plate for carrying a silicon wafer for the manufacturing of a semiconductor device during a deposition process for depositing a double-sided deposition of an amorphous hydrogenated carbon layer on first and second bevels of the wafer in a plasma reactor chamber,
- wherein the wafer includes a first main side having the first bevel on a border of the first main side, and a second main side having a central area and the second bevel on a border of the second main side surrounding the central area, the second main side being arranged opposite the first main side, and
- wherein the substrate carrier plate comprises:
- a substrate support for carrying the wafer,
- wherein the substrate support is formed such that when the wafer is placed on the substrate support, only the central area of the second main side comes in contact with the substrate support so that the amorphous hydrogenated carbon layer is deposited on both the first and second bevels of the wafer on the opposite first and second main sides of the wafer, respectively, when the central area of the second main side is in contact with the substrate support.
Dependencies are inferred from the claim text.