US 8,541,305 B2 · 3D integrated circuit and method of manufacturing the same

Abstract

The present invention provides a 3D integrated circuit and a manufacturing method thereof. The circuit structure comprises: a semiconductor substrate; at least one semiconductor device formed on the upper surface of the semiconductor substrate; a through-Si-via through the semiconductor substrate and comprising an insulating layer covering sidewalls of the through-Si-via and conductive material filled in the insulating layer; an interconnection structure connecting the at least one semiconductor device and the through-Si-via; and a diffusion trapping region formed on the lower surface of the semiconductor substrate. The present invention is applicable in manufacture of the 3D integrated circuit.

Claims20

Dependent claims

A three-dimensional integrated circuit structure, comprising:

a semiconductor substrate;
at least one semiconductor device formed on the upper surface of the semiconductor substrate;
a through-Si-via extending through the semiconductor substrate, and comprising a conductive via and an insulating layer covering sidewalls of the conductive via;
an interconnection structure connecting the at least one semiconductor device and the through-Si-via;
and
a diffusion trapping region formed on the lower surface of the semiconductor substrate and surrounding the through-Si-via.

3 more elements

Dependencies are inferred from the claim text.

Facts

Application

13/003,744Filed 19 Sep 2010

Priority

CN 2010 1 018914024 May 2010

Published

US 2011/0284992 A124 Nov 2011

Granted

24 Sep 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification7 codes

H10D 88/00
Three-dimensional [3d] integrated devices
H10W 20/023
Of interconnections within wafers or substrates: the interconnections being through-semiconductor vias
H10W 20/0245
The interconnections being through-semiconductor vias: comprising use of blind vias during the manufacture
H10W 20/0249
The interconnections being through-semiconductor vias: wherein the through-semiconductor via protrudes from backsides of the chips, wafers or…

3D integrated circuit and method of manufacturing the same

Life of this patent

3D integrated circuit and method of manufacturing the same

Life of this patent

Abstract

Claims20