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US 8,541,304 B2Granted
Production of TSV interconnection structures made up of an insulating contour and a conductive zone situated in the contour and disconnected from the contour
AssigneeCommissariat A L'energie Atomique Et Aux Energies Alternatives
InventorGabriel Pares
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Abstract
A method for producing an interconnection structure is disclosed. In one aspect, there is formation in a substrate of at least one trench forming a closed contour and at least one hole situated inside the closed contour, the trench and the hole being separated by a zone of the substrate. Furthermore, the trench is filled with a dielectric material and the hole is filled with a conducting material.
Claims22
A method for producing an interconnection structure with at least one via passing through a substrate, the method comprising:
- simultaneously forming, in a front face of the substrate, at least one first opening producing a closed contour and at least one second opening situated inside the closed contour, wherein the second opening does not pass through the substrate and the second opening includes a wall and a bottom, the first opening and the second opening being separated by a zone of the substrate;
- filling the first and second openings with a first material;
- removing the first material from one of the first and second openings from the front face;
- forming or depositing a second material in the one of the first and second openings from which the first material is removed;
- and
- after forming or depositing the second material, revealing the second opening from a back face of the substrate to form one interconnection via,
- wherein each of the first material and the second material comprises one of a dielectric material and a conducting material, and wherein the first material is different from the second material.
4 more elements
Dependencies are inferred from the claim text.