Electronic device including a trench with a facet and a conductive structure therein and a process of forming the same

An electronic device comprising:

• a semiconductor layer overlying a substrate and having a primary surface;
• and
• a trench extending into the semiconductor layer and having a first facet and a second facet spaced apart from the second facet, wherein:
• the first facet is disposed closer to the primary surface as compared to the second facet;
• the first facet lies along a first plane, the second facet lies along a second plane, and the primary surface generally corresponds to a third plane;
• and
• each of the first and second planes intersects the third plane at an angle in a range of approximately 20° to approximately 70°.

A process of forming an electronic device comprising:

• providing a semiconductor layer overlying a substrate and having a primary surface that generally corresponds to a first plane;
• patterning a semiconductor layer to define a trench;
• and
• forming a facet from a portion of the semiconductor layer, wherein the facet lies along a second plane that intersects the first plane at an angle in a range of approximately 20° to approximately 70°,
• wherein in a finished device:
• the facet is spaced apart from a bottom of the trench;
• and
• as compared to a bottom of the trench, a lowest elevation of the facet is disposed closer to the primary surface.