Dielectric stack
AssigneeGlobalfoundries Singapore Pte. Ltd.
InventorsSung Mun Jung, Swee Tuck Woo, Sanford Chu, Liang Choo Hsia
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Abstract
A method of forming a device is disclosed. The method includes providing a substrate and forming a device layer on the substrate having a formed thickness TFD. A capping layer is formed on the substrate having a formed thickness TFC. Forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD. The thickness of the capping layer is adjusted from TFC to about a target thickness TTC.
Claims20
A method of forming a device comprising:
- providing a substrate;
- forming a device layer on the substrate having a formed thickness TFD;
- forming a capping layer on the substrate having a formed thickness TFC, wherein forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD and wherein the amount of consumption of the device layer depends on the amount of growth of the capping layer;
- and
- adjusting the thickness of the capping layer from TFC to about a target thickness TTC.
A method of forming a device comprising:
- forming a base dielectric layer on a substrate having a base target thickness TTB;
- forming a storage dielectric layer over the base dielectric layer, the storage dielectric layer having a storage formed thickness TFS;
- forming an upper dielectric layer over the storage dielectric layer having a upper formed thickness TFU, wherein forming the upper dielectric layer consumes a desired amount of the storage dielectric layer to produce a storage dielectric layer with a storage target thickness TTS;
- and
- adjusting TFU of the upper dielectric layer to about an upper target thickness TTU.
A method of forming a device comprising:
- providing a substrate;
- forming a dielectric device layer on the substrate having a formed thickness TFD;
- and
- forming a dielectric capping layer on the substrate having a formed thickness TFC, wherein forming the capping layer consumes a desired amount of the device layer to cause the thickness of the device layer to be about the target thickness TTD.
Dependencies are inferred from the claim text.