US 8,541,266 B2 · Method for manufacturing semiconductor device

Abstract

In a method for manufacturing a transistor including an oxide semiconductor layer, a gate electrode is formed and then an aluminum oxide film, a silicon oxide film, and the oxide semiconductor film are successively formed in an in-line apparatus without being exposed to the air and are subjected to heating and oxygen adding treatment in the in-line apparatus. Then, the transistor is covered with another aluminum oxide film and is subjected to heat treatment, so that the oxide semiconductor film from which impurities including hydrogen atoms are removed and including a region containing oxygen at an amount exceeding that in the stoichiometric composition ratio. The transistor including the oxide semiconductor film is a transistor having high reliability in which the amount of change in threshold voltage of the transistor by the bias-temperature stress (BT test) can be reduced.

Claims20

Dependent claims

A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;
forming a first aluminum oxide layer over the gate electrode layer in a first chamber of an apparatus;
forming a first silicon oxide layer over the first aluminum oxide layer in a second chamber of the apparatus;
forming an oxide semiconductor layer over the first silicon oxide layer in a third chamber of the apparatus;
performing a heat treatment on the oxide semiconductor layer in a fourth chamber of the apparatus;
and
performing an oxygen supplying treatment on the oxide semiconductor layer in a fifth chamber of the apparatus;
wherein the steps of forming the first aluminum oxide layer, forming the first silicon oxide layer, forming the oxide semiconductor layer, performing the heat treatment, and performing the oxygen supplying treatment are successively performed without exposing the substrate to air, and
wherein the first chamber, the second chamber, the third chamber, the fourth chamber, and the fifth chamber are connected in series.

6 more elements

A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;
forming a first aluminum oxide layer over the gate electrode layer in a first chamber of a first apparatus;
forming a first silicon oxide layer over the first aluminum oxide layer in a second chamber of the first apparatus;
forming an oxide semiconductor layer over the first silicon oxide layer in a third chamber of the first apparatus;
performing a first heat treatment on the oxide semiconductor layer in a fourth chamber of the first apparatus;
performing an oxygen supplying treatment on the oxide semiconductor layer in a fifth chamber of the first apparatus;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
forming a second silicon oxide layer over the source electrode layer and the drain electrode layer in a sixth chamber of a second apparatus;
forming a second aluminum oxide layer over the second silicon oxide layer in a seventh chamber of the second apparatus;
and
performing a second heat treatment on the oxide semiconductor layer in a eighth chamber of the second apparatus,
wherein the steps of forming the first aluminum oxide layer, forming the first silicon oxide layer, forming the oxide semiconductor layer, performing the first heat treatment, and performing the oxygen supplying treatment are successively performed without exposing the substrate to air,
wherein the first chamber, the second chamber, the third chamber, the fourth chamber, and the fifth chamber are connected in series,
wherein the steps of forming the second silicon oxide layer, forming the second aluminum oxide layer, and performing the second heat treatment are successively performed without exposing the substrate to air, and
wherein the sixth chamber, the seventh chamber, and the eighth chamber are connected in series.

12 more elements

A method for manufacturing a semiconductor device, comprising the steps of:

forming a gate electrode layer over a substrate;
forming a first aluminum oxide layer over the gate electrode layer in a first chamber of a first apparatus;
forming a first silicon oxide layer over the first aluminum oxide layer in a second chamber of the first apparatus;
forming an oxide semiconductor layer over the first silicon oxide layer in a third chamber of the first apparatus;
performing a first heat treatment on the oxide semiconductor layer in a fourth chamber of the first apparatus;
performing an oxygen supplying treatment on the oxide semiconductor layer in a fifth chamber of the first apparatus;
forming a source electrode layer and a drain electrode layer over the oxide semiconductor layer;
forming a second silicon oxide layer over the source electrode layer and the drain electrode layer in a sixth chamber of a second apparatus;
forming a layer over the second silicon oxide layer in a seventh chamber of the second apparatus;
forming a second aluminum oxide layer over the layer in a eighth chamber of the second apparatus;
and
performing a second heat treatment on the oxide semiconductor layer in a ninth chamber of the second apparatus,
wherein the layer formed in the seventh chamber comprises one selected from the group consisting of a combination of an organic compound and a metal oxide, a transparent conductive oxide, and an oxide semiconductor comprising nitrogen,
wherein the steps of forming the first aluminum oxide layer, forming the first silicon oxide layer, forming the oxide semiconductor layer, performing the first heat treatment, and performing the oxygen supplying treatment are successively performed without exposing the substrate to air,
wherein the first chamber, the second chamber, the third chamber, the fourth chamber, and the fifth chamber are connected in series,
wherein the steps of forming the second silicon oxide layer, forming the layer, forming the second aluminum oxide layer, and performing the second heat treatment are successively performed without exposing the substrate to air, and
wherein the sixth chamber, the seventh chamber, the eighth chamber, and the ninth chamber are connected in series.

14 more elements

Dependencies are inferred from the claim text.

Method for manufacturing semiconductor device

Life of this patent

Method for manufacturing semiconductor device

Life of this patent

Abstract

Claims20