Thermoset molding for on-package decoupling in flip chips

An integrated circuit prepared by a process comprising:

• plasma cleaning a package substrate to which a plurality of capacitors have been mounted in a ring formation around a peripheral surface of the package substrate to provide on-package decoupling for a semiconductor device package;
• applying a molding compound to the peripheral surface of the package substrate surrounding the capacitors, wherein the molding compound is guided by a mold;
• heating the molding compound in the mold;
• opening the mold to expose the heated molding compound;
• curing the exposed molding compound for a period of time, wherein the mold is opened prior to the curing, and wherein the cured molding compound comprises a ring of cured molding compound surrounding the capacitors around the peripheral surface of the package substrate;
• placing an integrated circuit onto a top surface of the package substrate within an area defined by the ring formation, the placing occurring after the applying and the heating, the integrated circuit placed within an opening defined within interior sidewalls of the cured molding compound, and wherein a gap exists between sides of the integrated circuit and the ring of cured molding compound;
• and
• applying a layer of thermal integrate material to a surface of the integrated circuit.

A method, comprising:

• mounting a plurality of capacitors in a ring formation to a peripheral region of a top surface of a package substrate to provide on-package decoupling for a semiconductor device package, the package substrate comprising a plurality of alternating layers of an insulator and a conductor;
• applying a molding compound to the peripheral region of the top surface of the package substrate, the molding compound surrounding the capacitors;
• heating the molding compound;
• opening a mold encompassing the molding compound to expose the heated molding compound;
• curing the exposed molding compound for a period of time, wherein the mold is opened prior to the curing, and wherein the cured molding compound comprises a ring of cured molding compound surrounding the capacitors around the peripheral region of the package substrate;
• placing an integrated circuit onto a top surface of the package substrate within an area defined by the ring formation, the placing occurring at least after the applying and the heating, the integrated circuit placed within an opening defined within interior sidewalls of the cured molding compound, and wherein a gap exists between sides of the integrated circuit and the ring of cured molding compound;
• applying a layer of thermal integrate material to a surface of the integrated circuit;
• applying a layer of thermal adhesive to a surface of the cured molding compound;
• and
• placing a heatsink over the thermal integrate material and the thermal adhesive.