Chemical mechanical polishing composition and methods relating thereto
AssigneeRohm and Haas Electronic Materials CMP Holdings, Inc.
InventorsTirthankar Ghosh, Terence M. Thomas, Hongyu Wang, Scott A. Ibbitson
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Abstract
A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal. The chemical mechanical polishing composition comprises an inhibitor for the nonferrous metal; a copolymer of poly(ethylene glycol)methyl ether (meth)acrylate and 1-vinylimidazole; and water.
Claims9
A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a copper interconnect metal, comprising:
- 0.01 to 15 wt % of an inhibitor for the copper interconnect metal;
- 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether (meth)acrylate and 1-vinylimidazole;
- and water;
- wherein the chemical mechanical polishing composition has an acidic pH.
A chemical mechanical polishing composition useful for chemical mechanical polishing of a patterned semiconductor wafer containing a nonferrous metal, comprising:
- 0.01 to 15 wt % of an inhibitor for the nonferrous metal;
- 0.005 to 5 wt % of a copolymer of poly(ethylene glycol) methyl ether (meth)acrylate and 1-vinylimidazole;
- and water;
- wherein the chemical mechanical polishing composition has an acidic pH.
Dependencies are inferred from the claim text.