Method of manufacturing laterally graded porous silicon optical filter through diffusion-limited etching and filter structure manufactured thereby
AssigneesSamsung Electronics Co., Ltd., Seoul National University Industry Foundation
InventorsHeon Su Jeon, Kyung Wook Hwang
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a method of manufacturing a laterally graded porous silicon optical filter through diffusion-limited etching. The change in resonance frequency of the porous silicon layer in a taper axis direction is adjusted using the diffusion of reactive ions in an etchant under conditions of use of a related etch mask pattern. It is possible to manufacture an optical band-pass filter having a resonance frequency that linearly changes using a tapered etch window opening.
Claims8
A method of manufacturing a laterally graded porous silicon optical filter, the method comprising:
- forming an etch mask;
- conducting diffusion limited etching in a two-chambered porous silicon etch bath;
- and
- adjusting a lateral gradation of an etch depth by a pattern of the etch mask and diffusion of reactive ions in an etchant.
Dependencies are inferred from the claim text.