Physical vapor deposition with impedance matching network
AssigneeFUJIFILM Corporation
InventorsYouming Li, Jeffrey Birkmeyer, Takamichi Fujii, Takayuki Naono, Yoshikazu Hishinuma
Life of this patent
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Abstract
A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
Claims21
A method of physical vapor deposition comprising:
- applying, using a first radio frequency power source, a radio frequency signal to a cathode in a vacuum chamber of a physical vapor deposition apparatus, wherein the cathode includes a dielectric sputtering target;
- electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a dielectric substrate, and wherein the impedance matching network includes at least one capacitor;
- configuring the impedance matching network such that a positive self bias direct current voltage is generated on the dielectric substrate, wherein the positive self bias direct current voltage is between 10V and 100V;
- and
- depositing material from the dielectric sputtering target onto the dielectric substrate.
A physical vapor deposition apparatus comprising:
- a vacuum chamber having side walls;
- a cathode inside the vacuum chamber, wherein the cathode is configured to include a dielectric sputtering target;
- a radio frequency power supply configured to apply a radio frequency signal to the cathode;
- an anode inside and electrically connected to the side walls of the vacuum chamber;
- an impedance matching network;
- and
- a chuck inside the vacuum chamber, wherein the chuck is configured to support a dielectric substrate and the chuck is electrically connected to the impedance matching network, and wherein the impedance matching network is configured such that a positive self bias direct current voltage is generated on the dielectric substrate when the radio frequency signal is applied to the cathode by the radio frequency power supply, wherein the positive self bias direct current voltage is between 10V and 100V.
Dependencies are inferred from the claim text.