Semiconductor device and method for manufacturing the same

A semiconductor device comprising:

• a coil antenna including a first terminal and a second terminal;
• and
• a rectifier circuit comprising:
• a first transistor including a first gate electrode, a first source electrode, and a first drain electrode;
• a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the coil antenna and to the first drain electrode of the first transistor, respectively;
• a first coil electrically connected between the first gate electrode and the first drain electrode of the first transistor;
• a second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor;
• a first capacitor including a third terminal and a fourth terminal, the third terminal and the fourth terminal being electrically connected to the first terminal of the coil antenna and to the first drain electrode of the first transistor, respectively;
• and
• a second capacitor including a fifth terminal and a sixth terminal;
• the fifth terminal and the sixth terminal being electrically connected to the first source electrode of the first transistor and to the second drain electrode of the second transistor, respectively.

A semiconductor device comprising:

• an antenna including a first terminal and a second terminal;
• and
• a rectifier circuit comprising:
• a first transistor including a first gate electrode, a first source electrode, and a first drain electrode;
• the first drain electrode being electrically connected to the first terminal of the antenna;
• a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, the second drain electrode and the second source electrode being electrically connected to the second terminal of the antenna and to the first drain electrode of the first transistor, respectively;
• a first coil electrically connected between the first gate electrode and the first drain electrode of the first transistor;
• and
• a second coil electrically connected between the second gate electrode and the second drain electrode of the second transistor;
• a demodulation circuit electrically connected to the antenna;
• a modulation circuit electrically connected to the antenna;
• a constant voltage circuit electrically connected to the rectifier circuit;
• a clock generation circuit electrically connected to the constant voltage circuit;
• and
• a logic circuit electrically connected to the constant voltage circuit, to the clock generation circuit, to the demodulation circuit and to the modulation circuit.

A method for manufacturing a semiconductor device comprising the steps of:

• forming on a substrate a transistor including a semiconductor layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode;
• forming a first insulating layer over the transistor;
• forming a source electrode layer, a drain electrode layer and connection electrode layers over the first insulating layer, the source electrode layer and the drain electrode layer being in electrical contact with the source electrode and the drain electrode of the transistor, respectively;
• forming a second insulating layer over the source electrode layer, the drain electrode layer, the connection electrode layers and the first insulating layer;
• forming a coil over the second insulating layer, the coil being in electrical contact with one of the connection electrode layers;
• forming a third insulating layer over the coil and the second insulating layer;
• and
• forming an antenna over the third insulating layer.

A method for manufacturing a semiconductor device comprising the steps of:

• forming on a substrate a transistor including a semiconductor layer, a gate insulating layer, a gate electrode, a source electrode, and a drain electrode;
• forming a first insulating layer over the transistor;
• forming a source electrode layer, a drain electrode layer and connection electrode layers over the first insulating layer, the source electrode layer and the drain electrode layer being in electrical contact with the source electrode and the drain electrode of the transistor, respectively;
• forming a second insulating layer over the source electrode layer, the drain electrode layer, the connection electrode layers and the first insulating layer;
• forming a first coil over the second insulating layer, the first coil being in electrical contact with one of the connection electrode layers;
• forming a third insulating layer over the first coil,
• forming a second coil over the third insulating layer;
• forming a fourth insulating layer over the second coil and the third insulating layer;
• and
• forming an antenna over the fourth insulating layer.