Tunable ESD protection device

An electrostatic discharge (ESD) protection device, comprising:

• a substrate;
• a collector component of a bipolar junction transistor (BJT) device formed in the substrate, wherein the collector component is progressively doped in a manner such that a portion of the collector component closer to the surface of the substrate is more heavily doped than a portion of the collector component further away from the surface of the substrate;
• a base component of the BJT device formed in the substrate, the base component forming a first p-n junction with the collector component;
• and
• an emitter component of the BJT device formed on the base component, the emitter component forming a second p-n junction with the base component;
• wherein the base component is oppositely doped from the collector component and the emitter component.

An electrostatic discharge (ESD) protection device, comprising:

• a bipolar junction transistor (BJT) device, the BJT device including:
• a first p-n interface formed by a collector of the BJT device and a base of the BJT device, the collector including a plurality of doped features all having the same doping polarity but different doping concentration levels, the base being laterally disposed with respect to the collector and including one or more doped features;
• and
• a second p-n interface formed by the base and an emitter of the BJT device, the emitter being vertically disposed with respect to the base and including a doped feature formed above the base, the emitter having a greater doping concentration level than the base therebelow;
• wherein:
• the doped features of the base are of an opposite doping polarity from the doped features of the collector and the emitter;
• and
• a turn-on voltage, a breakdown voltage, and a holding voltage of the BJT device are each correlated with a layout parameter of the BJT device.