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US 8,525,296 B1Granted
Capacitor structure and method of forming the same
AssigneeUnited Microelectronics Corp.
InventorsYung-Chang Lin, Chien-Li Kuo
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Abstract
The present invention provides a capacitor structure, comprising a substrate, a TSV, a dielectric layer and a doped region. The substrate includes a first surface and a second surface, which are disposed oppositely to each other. The TSV penetrates through the first surface and the second surface. The dielectric layer is disposed in the substrate and encompasses the TSV. The doped region is disposed between the dielectric layer and the substrate. The present invention further provides a method of forming the same.
Claims8
A capacitor structure, comprising:
- a substrate with a first surface and a second surface which are disposed oppositely to each other;
- a through silicon via (TSV) disposed in the substrate, wherein the TSV penetrates through the first surface and the second surface of the substrate;
- a dielectric layer disposed in the substrate, wherein the dielectric encompasses the TSV;
- a doped region disposed between the dielectric layer and the substrate, wherein the TSV serves as a first electrode of the capacitor structure and the doped region serves as a second electrode of the capacitor structure.
1 more element
Dependencies are inferred from the claim text.