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US 8,525,225 B2Granted
Semiconductor device
AssigneeFurukawa Electric Co., Ltd.
InventorsHiroshi Kambayashi, Nariaki Ikeda, Seikoh Yoshida
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Abstract
A semiconductor device includes a plurality of electrodes arranged on a compound semiconductor layer grown on a substrate, and a surface protection film that protects a surface of a semiconductor layer on the compound semiconductor layer between the electrodes. A refractive index of the surface protection film is controlled so that a stress caused by the surface protection film on the surface of the semiconductor layer is minimized.
Claims7
A semiconductor device comprising:
- a plurality of electrodes including a first electrode and a second electrode arranged on a nitride-based compound semiconductor layer grown on a substrate;
- and
- a surface protection film that covers a surface of a semiconductor layer on the compound semiconductor layer between the electrodes by extending in direct contact with all the surface of the semiconductor layer from the first electrode to the second electrode of the plurality of electrodes, wherein
- the surface protection film is a dielectric film of silicon nitride expressed by formula SiNx, and
- a value of x, which is a composition ratio of silicon and nitrogen, is determined to be in a range by which a refractive index of the surface protection film along all of the surface of the semiconductor layer from the first electrode to the second electrode is equal to or greater than 2.0 and equal to or less than 2.09 in order to minimize leakage current.
2 more elements
Dependencies are inferred from the claim text.