Fabricating method for semiconductor device
AssigneeUnited Microelectronics Corp.
InventorTing-Chen Shih
Life of this patent
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Abstract
A fabricating method of a semiconductor device is provided. First, a substrate having a first surface and a second surface opposite to each other is provided. A shallow trench is formed on the first surface, and a first nitride layer is formed on the second surface. A dielectric layer is formed on the first surface of the substrate to cover the shallow trench. Then, the first nitride layer is removed, and a first protective layer is formed on the second surface of the substrate. After that, a planarization process is performed to remove a portion of the dielectric layer outside the shallow trench. The fabricating method is capable of improving the fabricating yield of semiconductor device.
Claims14
A fabricating method of a semiconductor device, comprising:
- providing a substrate having a first surface and a second surface opposite thereto, a shallow trench being formed on the first surface, and a first nitride layer being formed on the second surface;
- forming a dielectric layer on the first surface of the substrate to cover the shallow trench;
- removing the first nitride layer;
- after removing the first nitride layer, forming a first protective layer on the second surface of the substrate;
- and
- after forming the first protective layer, performing a planarization process to remove a portion of the dielectric layer outside the shallow trench.
Dependencies are inferred from the claim text.