Methods of forming a plurality of transistor gates, and methods of forming a plurality of transistor gates having at least two different work functions

A method of forming a plurality of transistor gates, comprising:

• forming a plurality of transistor gates over a substrate, the transistor gates comprising a conductive region;
• providing a material over the conductive region of the transistor gates, the material being of different composition from that of an outermost portion of the conductive region of the transistor gates;
• after providing the material, forming a mask to cover some of the transistor gates and leave others of the transistor gates not covered by the mask;
• within an etch chamber and after forming the mask, etching the material from being received over the transistor gates which are not covered by the mask;
• and
• in situ within the etch chamber after the etching, subjecting the substrate to at least one of a gaseous or plasma metal at a substrate temperature of at least 300° C. to diffuse said metal into the conductive region of the transistor gates which are not covered by the mask to modify work function of the transistor gates which are not covered by the mask as compared to work function of the transistor gates which are covered by the mask.