Optical proximity correction photomask
AssigneeWindbond Electronics Corp.
InventorKwei-Tin Yeh
Life of this patent
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Abstract
An optical proximity correction (OPC) photomask is provided. The photomask includes two opening patterns and a pair of scattering bar patterns. The two patterns are arranged on a substrate along a first direction and separated from each other by a predetermined distance. The pair of scattering bar patterns is arranged on the substrate along a second direction perpendicular to the first direction and adjacent to two opposing sides of each opening pattern. Each scattering bar pattern does not overlap with the opening patterns on the first and second directions as viewed from a cross sectional perspective. A phase shift of 180° exists between each opening pattern and each scattering bar pattern.
Claims10
An optical proximity correction photomask, comprising:
- two opening patterns, arranged on a substrate along a first direction and separated from each other by a predetermined distance;
- and
- a pair of scattering bar patterns, arranged on the substrate along a second direction perpendicular to the first direction and adjacent to two opposing sides of each opening pattern,
- wherein each scattering bar pattern does not overlap with the opening patterns on the first and second directions as viewed from a cross sectional perspective and a phase shift of 180° exists between each opening pattern and each scattering bar pattern.
An optical proximity correction photomask, comprising:
- a plurality of rectangular opening patterns, arranged on a substrate along a first direction to define a plurality of spacing regions therebetween;
- and
- a plurality of pairs of scattering bar patterns, respectively arranged on the substrate along a second direction perpendicular to the first direction, such that each pair of scattering bar patterns is adjacent to two opposing sides of a corresponding spacing region,
- wherein each scattering bar pattern does not overlap with the plurality of rectangular opening patterns on the first and second directions as viewed from a cross sectional perspective and a phase shift of 180° exists between each rectangular opening pattern and each scattering bar pattern.
Dependencies are inferred from the claim text.