Method for forming metallic nitride film

Abstract

A method for forming a metallic nitride film includes the steps of a) providing a target made of titanium or zirconium and a substrate in a vacuum chamber, and b) forming a metallic film, which is a TiN film or a ZrN film, on a surface of the substrate by sputtering deposition under the conditions of maintaining a working pressure of the vacuum chamber in a range of 5×10−4 Torr to 5×10−2 Torr; introducing a gas mixture of air and argon into the vacuum chamber at a flow rate ratio of the air to the argon ranging from 5:100 to 15:100, and applying a direct current power ranging from 100 Watts to 5000 Watts by a power supply. Because air can be conveniently collected and the requirement of the base pressure is lower than that of a prior art method, the method of the present invention has the advantages of simple equipment requirement, time-effective manufacturing processes and low cost.

Dependencies are inferred from the claim text.