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US 8,508,033 B2Granted
Semiconductor device
AssigneeRohm Co., Ltd.
InventorsSatoshi Kageyama, Yuichi Nakao
Life of this patent
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Abstract
The semiconductor device according to the present invention includes a semiconductor layer, an interlayer dielectric film formed on the semiconductor layer, a wire formed on the interlayer dielectric film with a metallic material to have a width of not more than 0.4 μm, and a broad portion integrally formed on the wire to extend from the wire in the width direction thereof.
Claims13
A semiconductor device comprising:
- a semiconductor layer;
- an interlayer dielectric film formed on the semiconductor layer;
- a wire formed on the interlayer dielectric film and configured to have a width of not more than 0.4 μm, the wire having a lower surface entirely in contact with the interlayer dielectric film;
- and
- a plurality of broad portions integrally formed with the wire and configured to extend from the wire in the width direction thereof;
- wherein the plurality of broad portions are provided at a prescribed interval in a direction along the wire;
- and
- wherein a length of each of the plurality of broad portions in the direction along the wire is less than a length of the wire between an adjacent pair of the plurality of broad portions.
5 more elements
Dependencies are inferred from the claim text.