Nonvolatile memory device and method for fabricating the same
AssigneeSK hynix Inc.
InventorHan-Soo Joo
Life of this patent
Estimating the term…
Abstract
A nonvolatile memory device includes a gate structure in which a plurality of interlayer dielectric layers and a plurality of gate electrodes are alternately stacked; a pass gate electrode lying under the gate structure; a sub channel hole defined in the pass gate electrode; a pair of main channel holes defined through the gate structure and communicating with the sub channel hole; a channel layer formed on inner walls of the pair of main channel holes and the sub channel hole; and a metallic substance layer contacting the channel layer in the sub channel hole.
Claims16
A nonvolatile memory device comprising:
- a gate structure in which a plurality of interlayer dielectric layers and a plurality of gate electrodes are alternately stacked;
- a pass gate electrode lying under the gate structure;
- a sub channel hole defined in the pass gate electrode;
- a pair of main channel holes defined through the gate structure and communicating with the sub channel hole;
- a channel layer formed on inner walls of the pair of main channel holes and the sub channel hole;
- and
- a metallic substance layer contacting the channel layer in the sub channel hole.
A method for fabricating a nonvolatile memory device, comprising:
- forming a pass gate electrode including a sacrificial layer over a substrate;
- alternately stacking a plurality of first substance layers and a plurality of second substance layers over the pass gate electrode;
- selectively etching the first substance layers and the second substance layers and defining a pair of main channel holes which expose the sacrificial layer;
- removing the sacrificial layer and defining a sub channel hole which communicates the pair of main channel holes with each other;
- forming a channel layer on inner walls of the pair of main channel holes and the sub channel hole;
- and
- forming a metallic substance layer in the sub channel hole.
Dependencies are inferred from the claim text.