Non-volatile memory device and method for fabricating the same

Abstract

A non-volatile memory device includes a channel that extends from a substrate in a vertical direction and includes a first portion including an impurity doped region and a second portion disposed under the first portion; and a plurality of memory cells and a selection transistor that are stacked over the substrate along the channel, where the impurity doped region includes a second impurity doped region that forms a side surface and an upper surface of the first portion and a first impurity doped region that covers the second impurity doped region, and a bandgap energy of the second impurity doped region is lower than a bandgap energy of the first impurity doped region.

Dependencies are inferred from the claim text.