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US 8,507,965 B2Granted
Semiconductor device and manufacturing method thereof
AssigneeFujitsu Semiconductor Limited
InventorsKazutoshi Izumi, Hitoshi Saito, Naoya Sashida, Kaoru Saigoh, Kouichi Nagai
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Abstract
An insulation film (24) having a gradual inclination of a surface is formed by a high density plasma CVD method, an atmospheric pressure CVD method or the like, after a ferroelectric capacitor (23) is formed. Thereafter, an alumina film (25) is formed on the insulation film (24). According to the method, low coverage of the alumina film (25) does not become a problem, and the ferroelectric capacitor (23) is reliably protected.
Claims5
A semiconductor device, comprising:
- a semiconductor substrate;
- a semiconductor element formed on the semiconductor substrate;
- a pad formed above the semiconductor substrate and connected to the semiconductor element;
- one wiring layer or two or more wiring layers formed between the semiconductor element and the pad;
- a water permeation prevention film formed between the pad and an uppermost wiring layer located at an uppermost position of the one wiring layer or two or more wiring layers, and preventing permeation of water from the pad side to the uppermost wiring layer side;
- and
- an alumina film that is away from the water permeation prevention film and covers a part of the wiring layer or the wiring layers.
4 more elements
Dependencies are inferred from the claim text.