Semiconductor device with vertical gate and method for manufacturing the same
AssigneeHynix Semiconductor Inc.
InventorSeung Hwan Kim
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Abstract
A semiconductor device and a method for manufacturing the same are disclosed. The method for manufacturing the semiconductor device comprises: forming a plurality of first pillar patterns each of which includes a sidewall contact by selectively etching a semiconductor substrate; forming a buried bit line at a lower portion of a region between two neighboring first pillar patterns; forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns; and forming a gate coupling second pillar patterns arranged in a direction crossing the bit line, the gate enclosing the second pillar patterns.
Claims15
A method for manufacturing a semiconductor device, the method comprising:
- forming a plurality of first pillar patterns, each of which includes a sidewall contact, by selectively etching a semiconductor substrate;
- forming a buried bit line between two neighboring first pillar patterns;
- forming a plurality of second pillar patterns by selectively etching upper portions of the first pillar patterns;
- and
- forming a gate surrounding the plurality of second pillar patterns and arranged in a direction crossing the bit line.
Dependencies are inferred from the claim text.