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US 8,507,342 B2Granted
Semiconductor device with buried bit lines and method for fabricating the same
AssigneeHynix Semiconductor Inc.
InventorKi-Ro Hong
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes active regions separated by a trench, a separation layer dividing the trench, and buried bit lines buried in the trench with the separation layer interposed between the buried bit lines.
Claims15
A method for fabricating a semiconductor device, comprising:
- etching a substrate and defining a trench which separates active regions;
- forming a liner layer which has contact zones for exposing portions of sidewalls of the active regions;
- and
- forming junctions on the exposed portions of the sidewalls of the active regions,
- wherein the etching of a substrate and defining a trench which separates active regions includes defining at least three trenches each separating two active regions and wherein widths of two of the trenches is wider than the width of the remaining trench interposed between the two trenches.
2 more elements
A method for fabricating a semiconductor device, comprising:
- etching a substrate and defining a trench which separates active regions;
- forming a separation layer which divides the trench into portions;
- and
- forming buried bit lines which are each buried in the respective divided portion of the trench,
- wherein the etching of a substrate and defining a trench which separates active regions includes defining at least three trenches each separating two active regions and wherein widths of two of the trenches is wider than the width of the remaining trench interposed between the two trenches.
2 more elements
A method for fabricating a semiconductor device, comprising:
- etching a substrate and forming active regions which are separated by alternating ones of first trenches and second trenches, wherein the second trenches have a width smaller than that of the first trenches;
- forming a junction on a sidewall of each of the active regions;
- forming separation layers dividing the first trenches, respectively;
- and
- forming buried bit lines which are buried in each of the first trenches with the respective separation layer interposed between the buried bit lines and are connected with the respective junctions.
2 more elements
Dependencies are inferred from the claim text.