BiCMOS device
AssigneeRenesas Electronics Corporation
InventorsShinichi Miyake, Kazuaki Tsunoda
Life of this patent
Estimating the term…
Abstract
In a BiCMOS device, a device isolation film separating the bipolar transistor region from the MOS region is taller than the substrate at least where it contacts the bipolar transistor region, and is preferably taller than the same layer where it contacts the MOS transistor region. This makes it possible to maintain the processing accuracy of a MOS transistor while stabilizing the diode current characteristics of the bipolar transistor.
Claims21
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein said bipolar transistor region comprises a silicide film contacting said device isolation film at one side thereof, and wherein said device isolation film is taller at said one side than another side thereof.
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein said device isolation film projects upwardly from said substrate at a part thereof contacting said bipolar transistor region, and
- wherein the bipolar transistor region comprises an emitter region contacting the device isolation film.
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein said MOS transistor region comprises a first silicide film contacting said device isolation film at one side thereof, and said bipolar transistor region comprises a second silicide film contacting said device isolation film at an opposite side thereof;
- said first silicide film having a greater depth in a portion thereof contacting said device isolation film and a shallower depth in a portion thereof not contacting said device isolation film;
- and
- said second silicide film having a substantially constant depth in a portion thereof contacting said device isolation film and in a portion thereof not contacting said device isolation film.
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein said MOS transistor region comprises a first silicide film contacting said device isolation film at one side thereof, and said bipolar transistor region comprises a second silicide film contacting said device isolation film at an opposite side thereof;
- wherein said device isolation film is taller at said opposite side than said one side.
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein the bipolar transistor region contacts the device isolation film at one side thereof, and wherein the device isolation film is taller at the one side than another side thereof.
A semiconductor device comprising:
- a substrate having a MOS transistor region and a bipolar transistor region;
- and
- a device isolation film separating the MOS transistor region from the bipolar transistor region;
- wherein the bipolar transistor region comprises a silicide;
- film on an upper surface of the substrate, the silicide film the device isolation film at one side thereof, and wherein the device isolation film is taller than an upper surface of the silicide film.
Dependencies are inferred from the claim text.