Substrate processing method and film forming method
AssigneeHitachi Kokusai Electric Inc.
InventorsMasaaki Ueno, Masakazu Shimada, Takeo Hanashima, Haruo Morikawa, Akira Hayashida
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AssigneeHitachi Kokusai Electric Inc.
InventorsMasaaki Ueno, Masakazu Shimada, Takeo Hanashima, Haruo Morikawa, Akira Hayashida
Estimating the term…
A substrate processing method in a processing chamber, has: accommodating a substrate into a processing chamber; and processing the substrate in the processing chamber on the basis of a correlation of a preset temperature of a heating device, a flow rate of fluid supplied by a cooling device and a temperature deviation between the center side of the substrate accommodated in the processing chamber and the outer peripheral side of the substrate while the substrate accommodated in the processing chamber is optically heated from an outer periphery side of the substrate at a corrected preset temperature by the heating device and the fluid is supplied to the outside of the processing chamber at the flow rate based on the correlation concerned to cool the outer peripheral side of the substrate by the cooling device.
A substrate processing method in a processing chamber, comprising:
A film forming method for forming a film on a substrate in a processing chamber comprising:
A film forming method for forming a film on a substrate in a processing chamber comprising:
A non-transitory computer-readable medium storing a control program which, when executed by a hardware processor, causes a computer to function as a device comprising:
Dependencies are inferred from the claim text.