Substrate surface modifications for compositional gradation of crystalline materials and associated products
OwnerChien-Min Sunginventor
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Abstract
A compositionally graded material having low defect densities and improved electronic properties is disclosed and described. A compositionally graded inorganic crystalline material can be formed by preparing a crystalline substrate by forming crystallographically oriented pits across an exposed surface of the substrate. A transition region can be deposited on the substrate under substantially epitaxial growth conditions. Single crystal substrates of a wide variety of materials such as diamond, aluminum nitride, silicon carbide, etc. can be formed having relatively low defect rates.
Claims20
A method of forming a compositionally graded inorganic crystalline material, comprising the steps of:
- a) preparing a crystalline substrate by forming crystallographically oriented pits across at least a portion of an exposed surface of the substrate;
- and
- b) depositing a transition region on the substrate such that the transition region has a compositional gradient from the crystalline substrate to a second region under epitaxial growth conditions.
A compositionally graded inorganic crystalline material, comprising:
- a) a crystalline substrate;
- b) a second region consisting essentially of a member selected from the group consisting of silicon carbide, diamond, nitrides, and combinations thereof;
- and
- c) a transition region connecting the crystalline substrate and second region, said transition region having a compositional gradient from the crystalline substrate to the second region and being epitaxial, the transition region and crystalline substrate meeting at an interface having crystallographically oriented pits along the interface filled with a portion of the transition region.
Dependencies are inferred from the claim text.