Polishing slurry for copper films
AssigneeAir Products and Chemicals, Inc.
InventorsRebecca A. Sawayda, Bentley J. Palmer
Life of this patent
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Abstract
A slurry for use in a chemical mechanical planarization process for a wafer comprises a chemical portion and a mechanical portion. The chemical portion comprises a surfactant that forms a layer over a metallic layer of the wafer to decreasing dishing to less than an average of 843 Å reduce the static etch rate of the metallic layer. The mechanical portion comprises an abrasive agent to assist in the planarization of the metallic layer of the wafer. In another embodiment, a slurry for polishing a copper layer formed over a first layer is disclosed. The slurry comprises an abrasive agent; and a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer. The shelf life of the slurry exceeds 90 days.
Claims27
A slurry for use in a chemical mechanical planarization process for a wafer comprising:
- a chemical portion comprising a surfactant that forms a layer over a metallic layer of the wafer to decrease dishing to less than an average of 843 Å;
- and,
- a mechanical portion comprising an abrasive agent to assist in the planarization of the metallic layer of the wafer,
- wherein the surfactant is a non-ionic alkyl phenol formaldehyde surfactant and the abrasive agent is a high- purity colloidal SiO2 having a concentration of any one contaminant of less than 100 ppb.
A slurry for the chemical mechanical planarization of a copper layer formed over a first layer, the slurry comprising;
- an abrasive agent;
- and
- a surfactant comprising at least one non-ionic surfactant to reduce the static etch rate of the copper layer, wherein the surfactant is a non-ionic alkyl phenol formaldehyde surfactant wherein the surfactant is a non-ionic alkyl phenol formaldehyde surfactant and the abrasive agent is a high- purity colloidal SiO2having a concentration of an one contaminant of less than 100 ppb;
- and
- wherein the slurry has a shelf life in excess of 90 days.
A slurry for use in the chemical mechanical planarization of a copper film on a wafer, the slurry comprising:
- a. glycine;
- b. 1,2,4 triazole;
- c. high-purity colloidal SiO2 having a concentration of any one contaminant of less than 100 ppb;
- and
- d. a surfactant operable to form a layer over the copper film in the absence of mechanical polishing to decrease the static etch rate of the copper film, wherein the surfactant is a non-ionic alkyl phenol formaldehyde surfactant.
Dependencies are inferred from the claim text.