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US 8,477,531 B2Granted
Spin torque transfer magnetoresistive random access memory in disk base with reduced threshold current
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChwen Yu, Tien-Wei Chiang
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Abstract
A semiconductor memory device includes a magnetic tunneling junction (MTJ); and a magnetic feature aligned with the MTJ and approximate the MTJ. When viewed in a direction perpendicular to the MTJ and the magnetic feature, the magnetic feature has a disk shape, and the MTJ has an elliptical shape and is positioned within the disk shape.
Claims20
A memory device, comprising:
- a magnetic tunneling junction (MTJ);
- and
- a magnetic feature aligned with the MTJ and approximate the MTJ, wherein the magnetic feature has a disk shape and the MTJ has an elliptical shape and is positioned within the disk shape, wherein the disk shape of the magnetic feature disk defines a first dimension D1 in a first direction and a second dimension D2 in a second direction perpendicular to the first direction, wherein D1 is substantially equal to D2.
A memory device, comprising:
- a magnetic tunneling junction (MTJ);
- and
- a magnetic feature approximate the MTJ, wherein when the memory device is viewed in a top view:
- the MTJ is disposed within the magnetic feature,
- the magnetic feature has a first shape defining a first dimension D1 in a first direction and a second dimension D2 in a second direction perpendicular to the first direction, D1 being substantially equal to D2,
- the MTJ has a second shape defining a third dimension D3 in the first direction and a fourth dimension D4 in the second direction, and
- D3 is substantially greater than D4 and D3 is less than or equal to D1.
4 more elements
A memory device comprising:
- a magnetic tunneling junction (MTJ), wherein the MTJ has an elliptical shape,
- a magnetic feature aligned with the MTJ and approximate the MTJ, wherein the magnetic feature has a disk shape, wherein the MTJ includes a free magnetic layer and a fixed magnetic layer separated by a thin dielectric material layer;
- and
- a conductive layer disposed between the magnetic feature and the MTJ, wherein the conductive layer is adjacent the free magnetic layer.
1 more element
Dependencies are inferred from the claim text.