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US 8,476,736 B2Granted
Low leakage diodes
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJam-Wem Lee, Yi-Feng Chang
Life of this patent
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Abstract
A diode includes an anode of a first conductivity type; a first cathode of the first conductivity type; and a second cathode of a second conductivity type opposite the first conductivity type. A lightly-doped region of the first conductivity type is under and vertically overlaps the anode and the first and the second cathodes. The portion of the lightly-doped region directly under the second cathode is fully depleted at a state when no bias voltage is applied between the anode and the second cathode.
Claims6
A device comprising:
- a p-type substrate;
- an n-type buried layer over the p-type substrate;
- a diode comprising:
- a lightly doped p-type region over the n-type buried layer;
- an anode over the lightly doped p-type region;
- a shallow p-type region between and contacting the lightly doped p-type region and the anode;
- a first cathode of n-type over the lightly doped p-type region;
- a shallow n-type region between and contacting the lightly doped p-type region and the first cathode, wherein the shallow p-type region and the shallow n-type region are spaced apart from each other by a portion of the lightly doped p-type region;
- and
- a second cathode of p-type over and contacting the lightly doped p-type region, wherein the first and the second cathodes are interconnected to be at a same voltage level;
- and
- a high-voltage N-well encircling the lightly doped p-type region, wherein a bottom of the high-voltage N-well contacts the n-type buried layer, and wherein the high-voltage N-well encircles the lightly doped p-type region, the anode, and the first and the second cathodes.
9 more elements
Dependencies are inferred from the claim text.