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US 8,476,731 B2Granted
Nitride semiconductor diode
AssigneeHitachi, Ltd.
InventorsAkihisa Terano, Kazuhiro Mochizuki, Takashi Ishigaki
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Abstract
In a Schottky electrode formation region on a nitride semiconductor, the total length of junctions of Schottky electrodes and a surface of a nitride semiconductor layer is longer than the perimeter of the Schottky electrode formation region. The total length is preferably 10 times longer than the perimeter. For example, the Schottky electrodes are formed concentrically and circularly.
Claims17
A nitride semiconductor diode comprising:
- a substrate;
- an n-conductivity-type nitride semiconductor layer disposed on the substrate;
- a Schottky electrode structure that is disposed on a surface of the nitride semiconductor layer and makes a Schottky junction with the surface of the nitride semiconductor layer, the Schottky electrode structure having one or more contact regions in contact with the nitride semiconductor layer;
- and
- an ohmic electrode in ohmic contact with the nitride semiconductor layer, wherein
- a total length of edges of the one or more contact regions of the Schottky electrode structure is greater than a perimeter of a Schottky electrode formation region of the Schottky electrode structure.
3 more elements
Dependencies are inferred from the claim text.