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US 8,476,721 B2Granted
Magnet-assisted transistor devices
AssigneeSeagate Technology LLC
InventorsYang Li, Insik Jin, Harry Liu, Song S. Xue, Shuiyuan Huang, Michael X. Tang
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Abstract
A transistor device includes a magnetic field source adapted to deflect a flow of free electron carriers within a channel of the device, between a source region and a drain region thereof. According to preferred configurations, the magnetic field source includes a magnetic material layer extending over a side of the channel that is opposite a gate electrode of the transistor device.
Claims20
A transistor device comprising:
- a semiconductor substrate including a source region, a drain region and a channel region, the channel region extending from the source region to the drain region;
- a gate electrode extending over the channel region on a first side of the semiconductor substrate;
- and
- a magnetic field source, the magnetic field source adapted to create a magnetic field that deflects the flow of free electron carriers, between the source region and the drain region, within the channel region of the semiconductor substrate, wherein the magnetic field source is on the first side of the semiconductor substrate, and wherein the gate electrode is formed from a magnetic material so as to comprise the magnetic field source.
1 more element
A transistor device comprising:
- a semiconductor substrate including a source region, a drain region and a channel region, the channel region extending from the source region to the drain region;
- a floating gate electrode extending over the channel region on a first side of the semiconductor substrate;
- a control gate electrode extending over the floating gate electrode;
- and
- a magnetic field source, the magnetic field source adapted to create a magnetic field, such that the magnetic field is directed to deflect the flow of free electron carriers, between the source region and the drain region, within the channel region of the semiconductor substrate, toward the floating gate electrode, wherein the magnetic field source comprises magnetic ions implanted within the channel region of the semiconductor substrate.
2 more elements
A transistor device comprising:
- a semiconductor substrate including a source region, a drain region and a channel region, the channel region extending from the source region to the drain region;
- a gate electrode extending over the channel region on a first side of the semiconductor substrate;
- and
- a magnetic field source, the magnetic field source adapted to create a magnetic field, such that the magnetic field is directed to deflect the flow of free electron carriers, between the source region and the drain region, within the channel region of the semiconductor substrate, wherein the magnetic field source comprises magnetic ions implanted within the channel region of the semiconductor substrate.
1 more element
Dependencies are inferred from the claim text.