Band edge engineered Vt offset device
AssigneeInternational Business Machines Corporation
InventorsBrent A. Anderson, Edward J. Nowak
Life of this patent
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Abstract
Band edge engineered Vt offset devices, design structures for band edge engineered Vt offset devices and methods of fabricating such structures is provided herein. The structure includes a first FET having a channel of a first compound semiconductor of first atomic proportions resulting in a first band structure and a first type. The structure further includes a second FET having a channel of a second compound semiconductor of second atomic proportions resulting in a second band structure and a first type. The first compound semiconductor is different from the second compound semiconductor such that the first FET has a first band structure different from second band structure, giving rise to a threshold voltage different from that of the second FET.
Claims17
A structure comprising:
- a first field effect transistor (FET) comprising a channel of a first compound semiconductor of first atomic proportions resulting in a first band structure and a first type;
- and
- a second field effect transistor (FET) comprising a channel of a second compound semiconductor of second atomic proportions resulting in a second band structure and said first type,
- wherein the first compound semiconductor is different from the second compound semiconductor such that the first FET has a first band structure different from second band structure, giving rise to a threshold voltage different from that of the second FET, and
- the first FET is disposed directly on a substrate comprising one of a bulk wafer and silicon on insulator (SOI), which comprises the channel of the first compound semiconductor.
A circuit, comprising:
- a first field effect transistor (FET) comprising a first channel with a first band structure comprising a first SiGe layer and a second SiGe layer on the first SiGe layer;
- and
- a second field effect transistor (FET) comprising a second channel with a second band structure comprising the first layer of SiGe,
- wherein the first and second FETs have identical channel doping, source, and drain structures.
A design structure embodied in a machine readable medium for designing, manufacturing, or testing an integrated circuit, the design structure comprising:
- a first field effect transistor (FET) comprising a channel of a first compound semiconductor of first atomic proportions resulting in a first band structure and a first type;
- and
- a second field effect transistor (FET) comprising a channel of a second compound semiconductor of second atomic proportions resulting in a second band structure and a first type,
- wherein the first compound semiconductor is different from the second compound semiconductor such that the first FET has a first band structure different from second band structure, giving rise to a threshold voltage different from that of the second FET, and
- the first FET is disposed directly on a substrate comprising one of a bulk wafer and silicon on insulator (SOI), which comprises the channel of the first compound semiconductor.
Dependencies are inferred from the claim text.