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US 8,476,707 B2Granted
Method for manufacturing semiconductor device
AssigneeHynix Semiconductor Inc.
InventorsJoong Sik Kim, Sung Woong Chung
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Abstract
A method for manufacturing a semiconductor device comprises including a insulating pattern and a silicon film over a SOI substrate, thereby increasing a reduced volume of a floating body after forming a floating body fin transistor so as to secure a data storage space. The method comprises: forming a insulating pattern and a first silicon film over an upper silicon film of a SOI substrate; and forming a fin structure in the first silicon film.
Claims6
A semiconductor device, comprising:
- an insulating pattern provided over an upper silicon film of a silicon on insulator (SOI) substrate;
- a first silicon film provided over the insulating pattern and the upper silicon film;
- a fin structure formed in the first silicon film;
- and
- a gate electrode formed over the fin structure,
- wherein the first silicon film defines a source region on a first side of the gate electrode and a drain region on a second side of the gate electrode,
- wherein the source and drain regions are separated from the upper silicon film by the insulating pattern, and
- wherein the gate electrode contacts the upper silicon film via an opening of the insulating pattern.
5 more elements
Dependencies are inferred from the claim text.