Semiconductor device and method for manufacturing the same,which prevents leaning of a storage node when forming a capacitor having a plurality of storage nodes of “L” or “+” shape support patterns
AssigneeHynix Semiconductor Inc.
InventorsHo Jin Cho, Cheol Hwan Park, Jae Wook Seo, Jong Kuk Kim
Life of this patent
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Abstract
A semiconductor device that prevents the leaning of storage node when forming a capacitor having high capacitance includes a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate; and support patterns formed to fix the storage nodes in the form of an ‘L’ or a ‘+’ when viewed from the top. This semiconductor device having support patterns in the form of an ‘L’ or a ‘+’ reduces stress on the storage nodes when subsequently forming a dielectric layer and plate nodes that prevents the capacitors from leaking.
Claims20
A semiconductor device comprising:
- a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate;
- and
- support patterns formed to partially fix only some storage nodes selected from the storage nodes in a form of an ‘L’ when viewed from above,
- wherein the storage nodes and the support patterns are divided into a plurality of groups separated from each other, wherein each of the groups comprise a support pattern selected from the support patterns and storage nodes fixed by the selected support pattern, and
- wherein the support pattern formed to contacts only outer surface of the storage node.
A method for manufacturing a semiconductor device, comprising the steps of:
- forming an insulation layer having a stack structure wherein a support layer is placed, over a semiconductor substrate;
- defining a plurality of holes by etching the insulation layer and the support layer;
- forming cylinder-shaped storage nodes in the holes;
- forming support patterns by etching the insulation layer and the support layer to partially fix only some storage nodes selected from the storage nodes in the form of an ‘L’ when viewed from above, so as to form a plurality of groups separated from each other, wherein each of groups comprise a support pattern selected from the support patterns and storage nodes fixed by the selected support pattern, and
- wherein the support pattern formed to contacts only outer surface of the storage node;
- and
- removing the remaining insulation layer after forming the support patterns.
A semiconductor device comprising:
- a plurality of cylinder-shaped storage nodes formed over a semiconductor substrate;
- and
- support patterns formed to partially fix only some storage nodes selected from the storage nodes in the form of a ‘+’ when viewed from above,
- wherein the storage nodes and the support patterns are divided into a plurality of groups separated from each other, wherein each of the groups comprise a support pattern selected from the support patterns and storage nodes fixed by the selected support pattern, and
- wherein the support pattern formed to contacts only outer surface of the storage node.
A method for manufacturing a semiconductor device, comprising:
- forming an insulation layer having a stack structure wherein a support layer is placed, over a semiconductor substrate;
- defining a plurality of holes by etching the insulation layer and the support layer;
- forming cylinder-shaped storage nodes in the holes;
- forming support patterns by etching the insulation layer and the support layer to partially fix only some storage nodes selected from the storage nodes in the form of a ‘+’ when viewed from above, so as to form a plurality of groups separated from each other, wherein each of the groups comprise a support pattern selected from the support patterns and storage nodes fixed by the selected support pattern, and
- wherein the support pattern formed to contacts only outer surface of the storage node;
- and
- removing the remaining insulation layer after forming the support patterns.
Dependencies are inferred from the claim text.