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US 8,476,642 B2Granted
Compound semiconductor device and manufacturing method thereof
AssigneeFujitsu Limited
InventorsTetsuro Ishiguro, Atsushi Yamada
Life of this patent
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Abstract
A compound semiconductor device includes a substrate; an initial layer formed over the substrate; and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor. The initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
Claims18
A compound semiconductor device comprising:
- a substrate;
- an initial layer formed over the substrate;
- and
- a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor;
- wherein the initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
2 more elements
A compound semiconductor device comprising:
- a substrate;
- a nucleation layer formed over the substrate;
- a buffer layer formed over the nucleation layer;
- an electron transport layer formed over the buffer layer;
- and
- an electron supply layer formed over the electron transport layer;
- wherein at least one of the nucleation layer and the electron transport layer includes an initial layer and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor;
- and
- wherein the initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
6 more elements
A method of manufacturing a compound semiconductor device comprising:
- forming an initial layer over a substrate;
- and
- forming a core layer containing a Group III-V compound semiconductor over the initial layer;
- wherein the initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
1 more element
A method of manufacturing a compound semiconductor device comprising:
- forming a nucleation layer over a substrate;
- forming a buffer layer over the nucleation layer;
- forming an electron transport layer over the buffer layer;
- and
- forming an electron supply layer over the electron transport layer;
- wherein at least one of the nucleation layer and the electron transport layer includes an initial layer and a core layer which is formed over the initial layer and contains a Group III-V compound semiconductor;
- and
- wherein the initial layer is a layer of Group III atoms of the Group III-V compound semiconductor contained in the core layer.
5 more elements
Dependencies are inferred from the claim text.