US 8,476,636 B2 · Poly-Si thin film transistor and method of manufacturing the same

Abstract

Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Claims9

Dependent claims

A Poly-Si TFT comprising:

an active layer on a gate insulating layer and formed of Poly-Si;
first Poly-Si layers on both side surfaces of the active layer and doped with a low concentration;
and
second Poly-Si layers on the first Poly-Si layers and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer.

1 more element

Dependencies are inferred from the claim text.

Facts

Application

12/314,212Filed 5 Dec 2008

Priority

KR 10-2008-006866415 Jul 2008

Published

US 2010/0012942 A121 Jan 2010

Granted

2 Jul 2013

Term ends

Not estimatedThe source records don’t support an estimate.

Classification4 codes

H10D 30/6717
Characterised by the doping profiles, e.g. having lightly-doped source or drain extensions: the source and the drain regions being asymmetrical
H10D 30/0316
Characterised by the gate electrodes: of lateral bottom-gate TFTs comprising only a single gate
H10D 30/0321
Of thin-film transistors [TFT]: comprising silicon, e.g. amorphous silicon or polysilicon
H10D
Inorganic electric semiconductor devices

Poly-Si thin film transistor and method of manufacturing the same

Life of this patent

Poly-Si thin film transistor and method of manufacturing the same

Life of this patent

Abstract

Claims9