Back to results
US 8,476,628 B2Granted
Device using oxide semiconductor, display device, and electronic apparatus
AssigneeSony Corporation
InventorsTetsuo Minami, Katsuhide Uchino
Life of this patent
Estimating the term…
Abstract
Disclosed herein is a device using an oxide semiconductor, the device including a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material, wherein the circuit part has a lower interconnect, an upper interconnect, and an interlayer insulating film, the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, and the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.
Claims12
A device using an oxide semiconductor, the device comprising:
- a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material and at least one wiring intersection portion,
- wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect,
- wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and
- wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.
1 more element
A device using an oxide semiconductor, the device comprising:
- a circuit part configured to include a thin film transistor using the oxide semiconductor as a channel material,
- wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film is over the lower interconnect with intermediary of a gate insulating film.
A device using an oxide semiconductor, the device comprising:
- a circuit part configured to include a thin film transistor and at least one wiring intersection portion,
- wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film includes an oxide semiconductor layer and a protective layer, the oxide semiconductor layer and the protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and
- wherein the protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer and the upper interconnect.
1 more element
A display device comprising:
- a pixel array part configured to be formed by arranging pixels each including an electrooptical element;
- and
- a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material and at least one wiring portion,
- wherein the wiring portion has an interlayer insulating film between a lower interconnect and a upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and
- wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.
3 more elements
A display device comprising:
- a pixel array part configured to be formed by arranging pixels each including an electrooptical element;
- and
- a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material,
- wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film over the lower interconnect with intermediary of a gate insulating film.
2 more elements
Electronic apparatus having a display device comprising:
- a pixel array part configured to be formed by arranging pixels each including an electrooptical element;
- and
- a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material and at least one wiring intersection portion,
- wherein the wiring intersection portion has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film includes an oxide semiconductor layer and a channel protective layer, the oxide semiconductor layer and the channel protective layer being stacked over the lower interconnect with intermediary of a gate insulating film, and
- wherein the channel protective layer is interposed between an outer circumferential surface of a rising part of the oxide semiconductor layer corresponding to thickness of the lower interconnect and the upper interconnect.
3 more elements
Electronic apparatus having a display device comprising:
- a pixel array part configured to be formed by arranging pixels each including an electrooptical element;
- and
- a circuit part configured to include a thin film transistor using an oxide semiconductor as a channel material,
- wherein the circuit part has an interlayer insulating film between a lower interconnect and an upper interconnect, the upper interconnect intersecting the lower interconnect, and
- wherein the interlayer insulating film is over the lower interconnect with intermediary of a gate insulating film.
2 more elements
Dependencies are inferred from the claim text.