High performance dielectric stack for DRAM capacitor

A method for forming a capacitor stack, the method comprising:

• forming a first electrode material above a substrate;
• forming a first dielectric material above the first electrode material, wherein the first dielectric material further contains a dopant;
• forming a second dielectric material above the first dielectric material, wherein the second dielectric material further contains a dopant and a doping level of the second dielectric material is less than a doping level of the first dielectric material;
• forming a second electrode material on the second dielectric material;
• and
• annealing the stack, wherein the first dielectric material is less than 30% crystalline after the annealing and the second dielectric material is equal to or greater than 30% crystalline after the annealing.