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US 8,476,140 B2Granted
High-performance diode device structure and materials used for the same
AssigneeMicron Technology, Inc.
InventorsGurtej Sandhu, Bhaskar Srinivasan
Life of this patent
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Abstract
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Claims20
A method of forming a diode comprising:
- forming a layer of a first conductive material;
- forming a heating element over the first conductive material;
- forming a layer of a diode material over the heating element;
- and
- forming a layer of a second conductive material over the diode material,
- wherein the diode material is selected from the group consisting of a vanadium oxide, an aluminum-doped vanadium oxide, a titanium-doped vanadium oxide and a rare earth manganate represented by the formula Ln(1-x)AxMnO3, wherein Ln represents a rare earth element and A represents an alkaline earth element.
3 more elements
A method of forming a diode comprising:
- forming a first conductive material;
- forming a heating element over the first conductive material;
- forming a diode material over the heating element;
- and
- forming a second conductive material over the diode material,
- wherein the diode material has characteristics allowing a first decrease in a resistivity of the diode material upon application of a first voltage to the diode material, thereby allowing current to flow through the diode material, and having further characteristics allowing a second decrease in the resistivity of the diode material in response to a temperature increase of the diode material by joule heating.
3 more elements
A method of forming a memory device comprising:
- forming a memory element;
- and
- forming a diode for accessing the memory element,
- wherein forming the diode comprises:
- forming a first conductive material;
- forming a diode material over the first conductive material;
- forming a heating element over the diode material;
- and
- forming a second conductive material over the heating element,
- wherein the diode material is selected from the group consisting of a vanadium oxide, an aluminum-doped vanadium oxide, a titanium-doped vanadium oxide and a rare earth manganate represented by the formula Ln(1-x)AxMnO3, wherein Ln represents a rare earth element and A represents an alkaline earth element.
7 more elements
Dependencies are inferred from the claim text.