Methods of FinFET height control

A method, comprising:

• providing a substrate;
• applying a first masking material to the substrate;
• patterning the first masking material, thereby defining a patterned masking material, the patterned masking material having a top surface;
• etching the substrate, thereby defining a plurality of first trenches in a first region of said substrate and a plurality of second trenches in a second region of said substrate;
• forming a material layer at least in the pluralities of first and second trenches;
• forming a second masking material above the material layer, said second masking material exposing said first region and covering said second region of said substrate;
• removing a first portion of the material layer from above said first trenches in said first region while covering said second trenches in said second region with said second masking material;
• removing the second masking material;
• after removing the second masking material, removing a second portion of the material layer from each of said first and second trenches;
• and
• after removing said second portion of the material layer, removing the patterned masking material.

A method, comprising:

• providing a substrate, the substrate having a top surface;
• forming a common stack material on the substrate top surface;
• forming a material layer on the common stack material;
• patterning the material layer, thereby defining a plurality of trenches and a plurality of patterned material structures;
• forming a first masking material in a first portion of the plurality of trenches and on a first portion of the plurality of patterned material structures, proximate the first portion of the plurality of trenches;
• forming a first channel material in a second portion of the plurality of trenches;
• removing the first masking material;
• forming a second masking material on the first channel material and on a second portion of the plurality of patterned material structures, proximate the first channel material;
• forming a second channel material in the first portion of the plurality of trenches, forming the second channel material to a height different from the height of the first channel material;
• removing the second masking material;
• and
• recessing the plurality of patterned material structures.