Methods of forming semiconductor devices using photolithographic shot grouping

A method of manufacturing semiconductor devices, the method comprising:

• organizing a final pattern used to form a mask, into at least one pass-based pattern, based on an inclination of the final pattern;
• determining pairs of pass-based shots that are direct neighbors to each other and have substantially equal sizes and substantially equal beam dosages to provide pass-based shot pairs for the pass-based pattern;
• classifying the pass-based shot pairs into a first pass shot set or a second pass shot set;
• performing first pass exposure of radiating an electron beam to a reticle for the first pass shot set;
• and
• performing second pass exposure of radiating the electron beam to the reticle for the second pass shot set.

A method of forming a pattern in a semiconductor device comprising:

• determining a shot set including a plurality of shots each having a respective size and beam dosages associated therewith for formation a mask;
• and
• determining the respective size and beam dosages to be used for each of the plurality of shots based on the determined shot set to provide a final pattern, wherein determining the respective size and beam dosages comprises setting the respective size of each of the plurality of shots to be equal to one another and setting the respective beam dosages of the plurality of shots to be equal to one another, the method further comprising:
• organizing ones of the plurality of shots into either a first pass of shots or a second pass of shots based on the respective sizes and respective beam dosages.