Protective cap for extreme ultraviolet lithography masks
AssigneeIntermolecular, Inc.
InventorWim Yves Deweerd
Life of this patent
Estimating the term…
Abstract
An extreme ultraviolet (EUV) lithography mask is provided. The EUV lithography mask includes a reflective layer and an absorptive layer deposited over the reflective layer. The absorptive layer is patterned so as to define absorptive regions of the mask for absorbing EUV radiation and reflective regions of the mask for reflecting EUV radiation. The EUV lithography mask further includes a protective capping layer which is deposited over both the absorptive regions and the reflective regions of the mask.
Claims18
An extreme ultraviolet (EUV) lithography mask comprising:
- a reflective layer;
- an absorptive layer deposited over the reflective layer,
- the absorptive layer being patterned so as to define absorptive regions of the mask for absorbing EUV radiation and reflective regions of the mask for reflecting EUV radiation;
- and
- a protective capping layer being conformally deposited over both the absorptive regions and the reflective regions of the EUV lithography mask,
- the protective capping layer comprising one of SiC, SiB, GeO2, TiO2, or mixtures thereof.
An EUV lithography mask, comprising:
- a top portion having absorptive regions for absorbing EUV radiation and reflective regions for reflecting EUV radiation;
- a transparent passivation layer deposited over said top portion,
- the transparent passivation layer protecting the absorptive regions and the reflective regions of the top portion,
- the transparent passivation layer comprising one of SiC, SiB, GeO2, TiO2, or mixtures thereof;
- and
- a bottom portion including a reflective layer for reflecting EUV radiation.
A method for evaluating materials, unit processes, and process sequences for manufacturing an EUV lithography mask, comprising:
- processing a first substrate having a first layer of material deposited over a second layer of material, the first and second layers representing a top portion of the EUV lithography mask,
- the first layer comprising one of SiC, SiB, GeO2, TiO2, or mixtures thereof;
- testing the first substrate for adherence properties between the layers;
- processing regions on a second substrate in a combinatorial manner by varying one of materials, unit processes or process sequences based on results from the testing of the first substrate, the regions on the second substrate representing a barrier layer deposited over the top portion of the EUV lithography mask;
- and
- testing the processed regions on the second substrate for optical properties.
Dependencies are inferred from the claim text.