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US 8,475,588 B2Granted
Wafer structure and epitaxial growth method for growing the same
AssigneeSamsung Corning Precision Materials Co., Ltd.
InventorSung-Soo Park
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Abstract
A wafer structure and epitaxial growth method for growing the same. The method may include forming a mask layer having nano-sized areas on a wafer, forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer, and forming an epitaxial material layer on the porous layer using an epitaxial growth process.
Claims11
An epitaxial growth method comprising:
- providing a single crystalline aluminium oxide wafer;
- forming an epitaxial mask layer of AIN having nano-sized areas on a wafer;
- forming a porous layer having nano-sized pores on a surface of the wafer by etching the mask layer and a surface of the wafer;
- and
- forming an epitaxial material layer on the porous layer using an epitaxial growth process.
2 more elements
Dependencies are inferred from the claim text.