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US 8,465,991 B2Granted
Carbon containing low-k dielectric constant recovery using UV treatment
AssigneeNovellus Systems, Inc.
InventorsBhadri N. Varadarajan, Kevin M. McLaughlin, Bart van Schravendijk
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Abstract
A method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric and associated apparatus enables process induced damage repair. The methods of the invention are particularly applicable in the context of damascene processing to recover lost low-k property of a dielectric damaged during processing, either pre-metallization, post-planarization, or both. UV treatments can include an exposure of the subject low-k dielectric to a constrained UV spectral profile and/or chemical silylating agent, or both.
Claims20
A method of forming a semiconductor device, comprising:
- receiving in a processing chamber a semiconductor device substrate comprising a carbon-containing low-k dielectric having a first dielectric constant;
- exposing the carbon containing low-k dielectric to a UV treatment, the treatment comprising at least one of:
- (a) exposure to UV radiation having a spectral profile characterized by greater than 50% of the UV radiation power having a wavelength of greater than 300 nm;
- and
- (b) exposure to UV radiation and a chemical silylating agent;
- such that the dielectric constant of the carbon-containing low-k dielectric is decreased to a second dielectric constant;
- wherein the treatment comprises exposure to the chemical silylating agent prior to the UV radiation exposure;
- and
- wherein a second UV radiation exposure precedes the exposing the carbon containing low-k dielectric to the chemical silylating agent.
6 more elements
Dependencies are inferred from the claim text.