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US 8,465,901 B2Granted
Methods of adjusting dimensions of resist patterns
AssigneeRohm and Haas Electronic Materials LLC
InventorsYoung Cheol Bae, Thomas Cardolaccia, Yi Liu
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Abstract
Methods of adjusting dimensions of resist patterns are provided. The methods allow for control of photoresist pattern dimensions and find particular applicability in resist pattern rework in semiconductor device manufacturing.
Claims20
A method of adjusting dimensions of a resist pattern, comprising:
- (a) providing a semiconductor substrate comprising one or more layers to be patterned;
- (b) applying a first layer of a photosensitive composition over the one or more layers to be patterned;
- (c) exposing the first layer to activating radiation through a patterned photomask;
- (d) developing the exposed first layer to form a resist pattern;
- (e) measuring a dimension of a feature of the resist pattern;
- (f) comparing the result of the dimension measurement with a predetermined target specification;
- (g) heat treating the resist pattern in a first hardbake process;
- (h) treating the hardbaked resist pattern with a material effective to make alkaline a surface of the resist pattern;
- (i) heat treating the resist pattern in a second hardbake process at a temperature based on the comparison of the result of the dimension measurement with the predetermined target specification;
- (j) applying a second layer of a thermally sensitive composition over the one or more layers to be patterned and in contact with the alkaline surface of the resist pattern, wherein the thermally sensitive composition is positive-acting and comprises a resin component and a thermal acid generator;
- (k) heat treating the second layer;
- and
- (l) developing the exposed second layer.
10 more elements
Dependencies are inferred from the claim text.