Chemical vapor deposition reactor and method
OwnerGang Liinventor
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Abstract
A reactor and method for performing chemical vapor deposition are disclosed. A chemical vapor deposition reactor can have a cylindrical chamber that comprises a cylindrical lid support and an annular gas distribution plate. Said chamber can be configured to have a horizontal laminar flow of at least one gas stream in the radial direction and a vertical downward flow of another gas stream over wafers. A large capacity of a CVD reactor with simple structures, easy maintenance and low consumption of reactants can be achieved. High uniformity, repeatability, reproducibility and consistency of depositing layers on wafers can be obtained.
Claims13
A chemical vapor deposition reactor apparatus, the apparatus comprising:
- a reactor body having a peripheral side wall defining a reaction chamber;
- a close element for operatively sealing the reaction chamber, the close element having an outer perimeter directly supported by the side wall;
- a support element located within the reaction chamber, a portion of the support element being spaced apart from the side wall and being within the reaction chamber for supporting an inner region of the close element, the support element being supportedly coupled to the reactor body;
- a gas egress passage proximal the support element;
- and
- a gas ingress passage located about the periphery of the reaction chamber;
- a wafer carrier within the reaction chamber for carrying a substrate undergoing chemical vapor deposition.
Dependencies are inferred from the claim text.