Gas mixer and manifold assembly for ALD reactor
AssigneeASM America, Inc.
InventorsRyan M. Schmidt, Mohith Verghese
Life of this patent
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Abstract
A system and method for mixing a plurality of gases for an atomic layer deposition (ALD) reactor. The mixer is configured to mix the plurality of gases while minimizing the potential for re-circulation within the mixer. The mixer is further configured to maintain the flow velocity of the plurality of gases as the gases pass through the mixer.
Claims20
A method of performing atomic layer deposition (ALD) in a deposition chamber, the method comprising:
- forming a first gas buffer in a first gas line so as to prevent a first gas from reaching a housing, the housing having a first generally tapered surface to form a mixing chamber therein, wherein the first gas is selectively flowable into the mixing chamber;
- flowing a second gas through a second gas line and into the mixing chamber while the first gas buffer is formed;
- mixing the second gas with a third gas in the mixing chamber to form a first gas mixture;
- swirling the first gas mixture in the mixing chamber;
- flowing the first gas mixture into a deposition chamber;
- and
- contacting a substrate in the deposition chamber with at least a portion of the first gas mixture.
A method of performing atomic layer deposition (ALD) in a deposition chamber, the method comprising:
- providing a housing having a flow axis, an inner surface defining a mixing chamber, a first cross-sectional area of the mixing chamber substantially perpendicular to the flow axis, and a second cross-sectional area of the mixing chamber substantially perpendicular to the flow axis, wherein the flow axis is an axis along which gases exit the mixing chamber, and wherein the second cross-sectional area is disposed downstream of the first cross-sectional area and is smaller than the first cross-sectional area;
- introducing a first gas into the mixing chamber at a first angle relative to the flow axis;
- introducing a second gas into the mixing chamber at a second angle relative to the flow axis;
- preventing a third gas that is selectively flowable into the mixing chamber from entering the mixing chamber;
- mixing the second gas and the first gas in the mixing chamber in the absence of the third gas to form a first gas mixture;
- and
- flowing the first gas mixture of the first gas and the second gas out of the mixing chamber along the flow axis and into a deposition chamber;
- contacting a wafer disposed in the deposition chamber with a portion of the first gas mixture;
- and
- exhausting an unused portion of the first gas mixture from the deposition chamber.
A method for mixing pulses of gas for use during atomic layer deposition (ALD), the method comprising:
- providing a housing having a first mixing surface and an opposing second mixing surface, wherein the first and second mixing surfaces form an annular passage therebetween about a flow axis, the flow axis being formed along an axis from which gases exit the housing, and wherein at least a first reactant gas, a second reactant gas, and a buffer gas are selectively flowable into the annular passage;
- introducing the first reactant gas into the annular passage perpendicular to the flow axis;
- introducing the first buffer gas into the annular passage perpendicular to the flow axis;
- mixing the first buffer gas and the first reactant gas in the housing in the absence of further reactants to form a first mixture;
- and
- flowing the first mixture of the first reactant gas and the first buffer gas out of the housing along the flow axis;
- and
- contacting a wafer with at least a portion of the first mixture.
Dependencies are inferred from the claim text.