Hollow anode plasma reactor and method
AssigneeLam Research Corporation
InventorsDavid W. Benzing, Babak Kadkhodayan
Life of this patent
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Abstract
The plasma processing apparatus includes a plasma chamber, a first electrode, a second electrode, and a plasma containment device. The plasma containment device has a plurality of slots and is electrically coupled to the first electrode. The containment device is configured to confine plasma within an inter-electrode volume while facilitating maximum process gas flow. When plasma is generated by applying electric fields to process gas within the inter-electrode volume, the containment device electrically confines the plasma to the inter-electrode volume without significantly restricting the flow of gas from the inter-electrode volume.
Claims21
A plasma confinement system comprising:
- an electrical ground;
- a containment device coupled to the electrical ground, the containment device acting as a first electrode having a surface facing an interior of the containment device;
- a process gas source coupled to the containment device;
- a second electrode having a surface facing the interior of the containment device that is proximate and substantially parallel to the first electrode;
- a first volume disposed between the first and the second electrodes;
- and
- a second volume disposed next to the first volume, wherein the first volume and the second volume are separated by one side adjacent to both the first volume and the second volume;
- wherein the containment device comprises the one side, the containment device substantially enclosing the first volume and electrically coupled to the electrical ground, the one side comprising at least one channel that allows gas to pass between the first volume and second volume, wherein the at least one channel is configured to maintain a pressure level of at least one of the first volume and the second volume.
A plasma chamber system comprising:
- a process gas source;
- a shroud that receives process gas from the process gas source, wherein the shroud comprises a first electrode;
- an inter-electrode volume that is disposed within the shroud, wherein the first electrode has a surface facing an interior of the inter-electrode volume;
- a second electrode having a surface facing the interior of the inter-electrode volume that is proximate and substantially parallel to the first electrode, wherein the inter-electrode volume is disposed between the first electrode and the second electrode;
- a second volume abutting the interelectrode volume;
- and
- at least one channel in the shroud that allows gas to pass between the inter-electrode volume and second volume, wherein the at least one channel is configured to minimize a pressure loss between the inter-electrode volume and the second volume.
A plasma chamber apparatus comprising:
- a gas source;
- a first electrode;
- a second electrode that is proximate to and substantially parallel to the first electrode;
- an inter-electrode volume between an inner surface of the first electrode and an inner surface of the second electrode that receives gas from the gas source;
- a second volume separate from but connected with the interelectrode volume;
- wherein the first electrode comprises a wall that separates the inter-electrode volume from the second volume, wherein the inter-electrode volume is adjoining the second volume at the wall;
- at least one channel through the wall that allows gas to pass between the inter-electrode volume and second volume, wherein the at least one channel is configured to maintain a pressure level at the inter-electrode volume or the second volume.
Dependencies are inferred from the claim text.